Plasticity mechanism for copper extrusion in through-silicon vias for three- dimensional interconnects
نویسندگان
چکیده
منابع مشابه
Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias
Electromigration (EM) is one of the main reliability concerns in copper interconnects. In particular, it is a critical issue for new emerging technologies, such as through silicon via (TSV) technology. In this work the impact of formation and growth of voids under a TSV located at the cathode end of a typical dual-damascene line is analyzed. The resistance change of the structure is numerically...
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Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in the TSV structure to cause reliability problems. In this study, the thermal stress in the TSV structure was measured by the wafer curvature method and its unique stress charact...
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